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| Transys Electronics LIMITED SOT-23-3L Plastic-Encapsulated Transistors 2SA1235A FEATURES Power dissipation PCM : 0.2 W (Tamb=25) TRANSISTOR (PNP) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 Collector current -0.2 A ICM : Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55 to +150 0. 0. 95 A 025 2. 80 A 05 0. 1. 60 A0. 05 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN -60 -50 -6 -0.1 -0.1 150 90 -0.3 -1 V V 500 MAX UNIT V V V Ic= -100 A, IE=0 Ic= -0.1 mA, IB=0 IE= -100A, IC=0 VCB=-60 V , IE=0 VEB= -6V , IC=0 0. 35 2. 92 A0. 05 1. 9 A A VCE=-6V, IC= -1mA VCE=-6V, IC= -0.1mA IC=-100 mA, IB= -10mA IC= -100mA, IB= -10mA Transition frequency fT VCE=-6V, IC= -10mA 180 MHz CLASSIFICATION OF hFE(1) Marking Range M*E 150-300 M*F 250-500 |
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